Time-resolved kinetics of e-h plasma in GaAsP under intense picosecond laser pulse excitation

Time-resolved photoluminescence kinetics of GaAs1−xPx (x=0.38) were measured by a streak camera system in order to determine the radiative and nonradiative recombination rates. The photoluminescence decay profile was found to be intensity dependent. When excitation power fluence increased above 6×108 W/cm2, the decay profile of emission deviated from exponential form. This is attributed to bimolecular and Auger processes. The bimolecular and Auger rates were determined to be BR=9×10−10 cm3/s and CNR=3×10−29 cm6/s by fitting the time-resolved photoluminescence decay profiles to the solution of the rate equation which describes the dynamical behavior of the photogenerated carriers.