A new concept of damping relaxation oscillations in injection laser diodes is described. This method involves the operation of the laser as a part of a bipolar transistor, and the damping is accomplished by reducing the carrier lifetime in the laser active region only at frequencies near resonance. The advantage of the proposed method is that the damping mechanism does not affect the laser operation at any other frequency range.
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Katz et al. (1982) studied this question.