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The electronic properties of the 3d transition metal impurities titanium and chromium in crystalline germanium have been investigated by means of deep level transient spectroscopy. The metals were implanted at 90keV and diffused deeper into the bulk during a thermal anneal at 500°C, which yielded spectra specific for the implanted metal. It was found that Ti introduces a deep electron trap and a semishallow hole trap. For Cr one deep electron trap and three hole traps were observed. The capture cross section of the electron traps is thermally activated while three of the hole traps display electric field enhanced emission, which is in agreement with multiple-acceptor states of metal impurities on substitutional sites. It is concluded that Ti in germanium is a double acceptor, while Cr is a triple acceptor with, in addition, a donor level close to the valence band.
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Lauwaert et al. (2009) studied this question.
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