Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process: Growth from Undoped Si Melt

Dislocation-free Si crystals have been grown successfully by the Czochralski (CZ) method without the Dash-necking process. It was found that the boron concentration limit in the seed for no dislocation formation due to thermal shock was 1×10 18 atoms/cm 3 , and the maximum admissible discrepancy of boron concentration in the seed and in the crystal was 7×10 18 atoms/cm 3 for no dislocation formation in the crystal due to the lattice misfit. Consequently, it is revealed that dislocation-free CZ-Si crystals can be grown from undoped Si melt without the Dash-necking process when a seed with a suitable boron concentration is used.