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We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (3 monolayers) segregation of the B during Si overgrowth, leaving over half of the B atoms in ordered sites. Ordering persists over length scales comparable to the clean-surface terrace width, as measured by grazing angle x-ray diffraction.
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Weir et al. (1992) studied this question.
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