Metal-semiconductor domain configurations during switching of VO₂single crystals

The geometry of stationary or mobile metallic and semiconducting domain configurations and their formation during the switching of a VO 2 single crystal are discussed. It is shown that the motion of narrow semiconducting domains in the sense of the electric current is driven by the Peltier effect at the two oppositely biased interfaces. The Peltier heat may be partially or totally compensated for by thermal fluxes along temperature gradients in the supercooled metal and in the superheated semiconductor.