A new type of voltage-controlled negative resistance is observed in very thin samples of n-InSb in a high electric field in the region of avalanche breakdown (E≳600 V/cm) and a transverse high magnetic field (B≳1 kG) at 77 K. The negative resistance is observed only in thin samples whose thickness is less than about 30 μm regardless of the length. The mechanism of negative resistance seems to be different from proposed effects such as trapping of hot electrons, Gunn effect, and the acoustoelectric domain effect.
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Kamakura et al. (1975) studied this question.
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