Single-Shot Single-Gate rf Spin Readout in Silicon

For solid-state spin qubits, single-gate rf readout can minimize the number of gates required for scale-up since the readout sensor can integrate into the existing gates used to manipulate the qubits. However, stateof-the-art topological error correction codes benefit from the ability to resolve the qubit state within a single shot, that is, without repeated measurements. Here, we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of 82.9% at 3.3 kHz measurement bandwidth. We use this technique to measure a triplet T -to singlet S 0 relaxation time of 0.62 ms in precision donor quantum dots in silicon. We also show that the use of rf readout does not impact the spin lifetimes (S 0 to T -decay remained approximately 2 ms at zero detuning). This establishes single-gate sensing as a viable readout method for spin qubits.