We report on terahertz detection (from 0.2 THz to 2.4 THz) by Si FinFETs of different widths (with 2, 20, and 200 fins connected in parallel). FinFETs (with a small number of fins and with feature sizes as short as 20 nm to 40 nm) showed a very high responsivity (far above that previously measured for standard CMOS). We explain this improvement by negligible narrow channel effects.
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Stillman et al. (2011) studied this question.
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