This paper examines the effect of the top gate on the static characteristics of dual-gate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs). Both forward and reverse regimes of operation are considered. The top gate has a distinct effect on the threshold voltage, subthreshold slope, drive-current capability, and the leakage current of the TFT. In particular, the threshold voltage is found to linearly decrease with increasing top-gate bias. Specific bias configurations of the dual gate TFT critical to vertical integration of on-pixel electronics for imaging and display applications are also presented.
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Servati et al. (2003) studied this question.
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