We present experimental evidence of electron-beam-induced diffusion of O and H in unintentionally doped n-type GaN grown on a sapphire substrate. Impurity diffusion was investigated using cathodoluminescence kinetics and imaging at 4 and 300 K and by wavelength dispersive x-ray analysis. The results illustrate the significance of electron-beam-induced electromigration in wide band gap semiconductors, confirm the roles of ON^• in bound exciton, donor-acceptor pair and yellow emissions and suggest the involvement of ON^• and hydrogenated gallium vacancies in the previously unexplained blue luminescence.
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Toth et al. (1999) studied this question.
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