The electronic structure and the optical properties of a model of negative-curvature fullerene suggested by Vanderbilt and Tersoff are studied by detailed first-principles local-density calculations. It is shown that this hypothetical material is a semiconductor with an indirect band gap of 0.48 eV and a large ratio of electron-hole effective masses. The optical properties are very different from those of graphite or C₆₀ fullerene.
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Ching et al. (1992) studied this question.
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