Structural and magnetic properties of V-doped AlN thin films

We report on the structural and magnetic properties of V-doped AlN thin films deposited on c-plane (001) sapphire by reactive cosputtering. The AlN crystal structure was maintained, with decreasing c lattice parameter, as V content increased to 1.58at.%. No secondary phase was found. Films exhibited ferromagnetism at room temperature with Hc=21.0Oe. The magnetization corresponded to ∼0.14μB per V atom and the Curie point was near 300K. The substitutional solubility of V in AlN is estimated to be ∼1.5at.% at the growth temperature of 1060K. The temperature dependence of resistance in the temperature range of 300–400K corresponded to a highly resistive insulator.