Influence of Substrate Temperature on Physical Structure of AlN Thin Films Prepared on Polycrystalline MoSi ₂ by rf Magnetron Sputtering

c‐axis‐oriented aluminum nitride thin films were prepared on polycrystalline molybdenum disilicide substrates by rf magnetron sputtering at substrate temperatures of 50°–500°C. The films with the best orientation and crystallinity were prepared at 300°C. The dependence of film microstructure on substrate temperature was investigated by atomic force microscopy (AFM). Consequently, the microstructure changed in accordance with the model proposed by Thornton. It was found that the orientation and crystallinity of the films were optimal when the films consisted of dense fibrous grains. Further, it was confirmed that piezoelectric measurements could be made from the films during mechanical impacts.