The electroluminescence of rare-earth implanted ZnS and ZnSe diodes

Observations of the electroluminescence, photoluminescence, and cathodoluminescence of undoped and rare-earth doped ZnS and ZnSe diodes yield valuable information on the physical processes governing the behaviour of the electroluminescence emission from these crystals. The results show that implantation of rare-earth ions results in scattering centres which severely influence the hot electron energy distribution, in addition to producing Auger processes which affect both the interconduction band emission and the efficiency of the observed rare-earth electroluminescence.