The development of a capacitive microphone with an integrated detection circuit is described. The condenser microphone is made by micromachining of polyimide on silicon. Therefore, the structure can be realized by postprocessing on substrates containing integrated circuits (IC's), independently of the IC process, integrated microphones with excellent performances have been realized on a CMOS substrate containing dc-dc voltage converters and preamplifiers. The measured sensitivity of the integrated condenser microphone was 10 mV/Pa, and the equivalent noise level (ENL) was 27 dB(A) re. 20 /spl mu/Pa for a power supply voltage of 1.9 V, which was measured with no bias voltage applied to the microphone. Furthermore, a back chamber of infinite volume was used in all reported measurements and simulations.
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Pederson et al. (1998) studied this question.
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