Dual implantations of Be+/N+, Be+/Ar+, and Be+/O+ in AlxGa1−xAs are performed and studied by means of Hall-effect measurements. Dual implantation of Be+/N+ leads to significantly less Be redistribution and considerably higher electrical activity of the Be implant, compared with those of Be+ single implantation. Furthermore, while Be+/Ar+ coimplantation does not lead to Be redistribution, it neither distinctly improves electrical activity. Similar behavior is observed with both Be+/Ar+ and Be+/O+ coimplants. These results provide confirmation that the activation improvement observed in the (group II/group V) coimplanted AlxGa1−xAs arises mainly from chemical effects.
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Adachi et al. (1988) studied this question.
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