An amorphous‐InGaZnO (a‐IGZO) thin‐film transistor (TFT)‐based V com driver circuit that has long‐term reliability and can be integrated with the pixel array on a panel has been designed. Owing to the V com inversion, the power consumed by the proposed driving scheme is 40% less than that consumed by the conventional line‐inversion method. The high mobility (>10 cm 2 /V‐sec) of the a‐IGZO TFTs allows the integration of devices with small channel widths (<750 μm) and thus keeps the overall device size small, which is important for displays with narrow bezels. The lifetime of the V com driver is improved by AC driving (by clocking the n ‐th and ( n + 1)‐th frame with 20 and 0 V, respectively) of the buffer TFTs.
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Jeong et al. (2011) studied this question.
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