High Mobility GaInAs Thin Layers Grown by Molecular Beam Epitaxy

Thin (0.5 µm) GaInAs layers are grown by molecular beam epitaxy on InP substrates with and without AlInAs buffer layers. The best electron mobilities of the layer grown without the buffer are 9700 cm 2 V -1 s -1 at room teperature and 55500 cm 2 V -1 s -1 at 77K in the dark. The highest mobility of the layer is 61000 cm 2 V -1 s -1 at 60 K. Electron mobilities of the layer with the buffer are as high as 11900 cm 2 V -1 s -1 at room temperature and 53800 cm 2 V -1 s -1 at 77 K in the dark, while 64400 cm 2 V -1 s -1 is measured at 77 K under an illumination condition.