The effects of light in the gold chemiplating and the etching of gallium arsenide have been investigated by partially illuminating samples submerged in various solutions. The plating occurs at the nonilluminated and etching at the illuminated region on n‐type material, whereas the reverse is true for p‐type. Etching can be accomplished in very dilute electrolytes, such as , by the action of light. A qualitative explanation for the experimental results is given, based on the photoeffects made possible by the bending of the energy bands in the space charge region of the semiconductor when it is placed in electrolytes.
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R. W. Hoisty (1961) studied this question.