We demonstrated a silicon photonics-wireless interface integrated circuit (IC) realized in 0.25- μ m SiGe bipolar complementary metal-oxide-semiconductor technology, which converts 850-nm optical nonreturn-to-zero data into 60-GHz binary phase-shift keying wireless data. A transmission of 1.6 Gb/s in 60 GHz using the interface IC is successfully demonstrated with the error-free operation achieved at 6-dBm optical input power.
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Ko et al. (2012) studied this question.