Impulse stimulated crystallization of Sb films investigated by time resolved TEM

Time resolved TEM suitable to track phase transitions as short as 3 ns in specimen areas down to 0.5 μm ∅︁ is described. This method is applied to the ‘explosive’ crystallization of amorphous Sb films as a typical example of impulse stimulated transitions, and the growth time of individual crystallites is determined for the first time. At electron pulse current densities j≦0.02 A/mm2 the electron beam merely triggers the transition, which progresses at 2.5 m/s giving a mosaic crystal structure. At j ≧ 0.1 A/mm2 superheating of the amorphous state apparently occurs and single crystals of 1 to 2 μm ∅︁ emerging with 80 m/s characterize the crystallization. Single crystal growth necessitates an activation energy 0.09 to 0.27 eV. Polycrystalline areas grow slower.