Galvanomagnetic measurements of the annealing kinetics in quenched aluminium

Resistivity and galvanomagnetic resistivity measurements on 99.999% aluminium foils and wires quenched from T > 600 to 4 K are presented. Changes in defect concentration during isochronal annealing were indicated by the residual electrical resistivity at 4 K and changes in the defect configuration in the galvanomagnetic coefficients, the latter being an essential feature of the different types of defects in question. Taking into account size effect corrections up to 80 kG it is found that the magnetoresistivity at low, intermediate, and high fields is influenced by the scattering character of the lattice defects. Between 200 and 400 K the recovery was found to have a complex substructure due to mono-divacancy equilibration and annealing.