Size Effect and Temperature Dependence of the Electrical Resistance in Bismuth Single Crystals of High Perfection

Bi single crystals of high perfection (having extremely high resistance ratios r 4.2 = ϱ 290 K /ϱ 4.2 K ) are grown by the mould growing method. In these crystals, the thickness dependence of the resistance ratio r 4.2 and the temperature dependence of the electrical resistance are investigated in a temperature range between 2 and 77 K. In the range of the diffusion size effect, a markedly different behaviour is found to occur in the thickness dependence of the two crystal orientations investigated ( j ‖ C 3 ; j ‖ C 2 ). An anisotropy of the slope of the T 2 ‐terms is detected in the temperature dependences of the electrical resistance in the temperature interval from 2 to 16 K.