We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CA-LDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-µm-wide active region were 4.4 (8.1) kA/cm 2 , 6.1 (7.7) V, 96.5 (63.5) mW, and 4.7 (6.0) Ω under pulsed conditions and before facet coating, respectively.
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Megalini et al. (2015) studied this question.
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