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Fabrication technology of InGaAs wire structures by preferential molecular beam epitaxy growth on corrugated InP substrate was successfully developed for the first time. Growth was made on the substrates having V-grooves with (211)A or (111)A facets and wires were made in nonquantum regime. The effects of the growth conditions on the cross-sectional structure and photoluminescence (PL) properties were clarified. Wires grown on (111)A facets showed better structural and PL properties than those on (211)A facets. Insertion of an InGaAs low-temperature (LT) buffer layer was found to greatly improve the band-edge PL intensity. Under optimum conditions, the wire exhibited an intense PL emission with a narrow peak width at an energy position of InGaAs lattice-matched to InP. A defect-related emission is also observed and discussed.
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Fujikura et al. (1994) studied this question.
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