In situ study of HfO2 atomic layer deposition on InP(100)

The interfacial chemistry of the native oxide and chemically treated InP samples during atomic layer deposition (ALD) HfO2 growth at 250 °C has been studied by in situ X-ray photoelectron spectroscopy. The In-oxide concentration is seen to gradually decrease on the native oxide and acid etched samples. No significant changes of the P-oxide concentrations are detected, while the P-oxides chemical states are seen to change gradually during the initial cycles of ALD on the native oxide and the chemically treated samples. (NH4)2S treatment strongly decreases In-oxide and P-oxide concentrations prior to ALD and maintains low concentrations during the ALD process.