(NH4)2Sx-treated InP(001) surfaces were analyzed by using synchrotron radiation photoelectron spectroscopy to characterize the S-passivated surfaces and elucidate the solution etching mechanism. Polysulfide chemical states were observed for the first time in both the P 2p and In 4d spectra. Monosulfide and polysulfide states were also evident in the S 2p spectra. Etching models consistent with the experimental results were discussed.
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Maeda et al. (1993) studied this question.
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