Conductive oxides RuOx as alternative electrode on high-κ HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx∕HfO2∕Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO2∕Si are determined to be 3.05±0.1 and 1.48±0.1eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95–2.73eV.
No takes yet. Share an insight, caveat, or question.
Li et al. (2004) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: