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July 1, 1992Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular-beam epitaxially grown GaAs(001)

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Authors

MPM. D. PashleyPhilips (Finland)KHK. W. HaberernBennett Aerospace (United States)RFR. M. FeenstraCarnegie Mellon University

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Cite This Study

Pashley et al. (1992) studied this question.

synapsesocial.com/papers/6a831afbc0477142e551ae89 https://doi.org/10.1116/1.586215

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