Recombination effects in GaAsSb-based double-heterojunction bipolar transistors featuring AlInP and GaInP emitters are investigated. AlInP emitters provide a reduced intrinsic recombination but result in a significantly increased base surface recombination in comparison to GaInP emitters. Photoluminescence measurements confirm that the GaAsSb surface after etching AlInP has a higher recombination velocity and exhibits a greater sensitivity to the passivation method than when a GaInP emitter is used.
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Lövblom et al. (2013) studied this question.
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