Lasing in the far IR spectral range under femtosecond optical excitation of the InAs semiconductor in a magnetic field

Generation of a coherent electromagnetic radiation in the far IR (THz) spectral range upon excitation of a semiconductor InAs crystal by 70-fs Ti: sapphire laser pulses is studied. The effect of a magnetic field of different orientation on generation in the submillimeter-wavelength range is analyzed. Placing the crystal into the magnetic field of an optimized permanent magnet with a strength of 5 kOe aligned along the surface of the semiconductor increased the power of generated radiation by a factor of six compared with that in the absence of the field. For the average pump-laser output power of 150 mW and repetition rate of 80 MHz, the average power of the THz radiation reached 100 nW. For detection of ultrashort pulses of the THz radiation, we used, for the first time, a highly sensitive uncooled optoacoustic detector, which detected signals with a power lower than 1 nW.