Si surfaces previously exposed to plasmas (RIE mode) have been characterized by x‐ray photoelectron spectroscopy (XPS). Plasma exposure of a clean Si surface leads to the deposition of a C,F containing film. The XPS spectrum reveals various bonding states of carbon, including , , CF, . The [C]/[F] ratio and the relative concentrations of the different carbon species do not depend on exposure time. For very short exposure times (∼1s) the polymer deposition is instantaneous and the film substrate interface is accessible. It consists of a layer—probably the remains of the native oxide layer existing on the substrate—and C‒Si and Si‒F species implanted within or below the . layer. The ion bombardment is thus proved to be an essential parameter of the polymer deposition initial mechanism.
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Cardinaud et al. (1988) studied this question.