Carbon tetrachloride plasma etching can be performed in a regime in which a film‐like product is simultaneously formed on vertical surfaces but inhibited from forming on horizontal surfaces. If the photoresist profile is properly tailored, this process is capable of etching polysilicon or layered refractory metal (tantalum, molybdenum) silicide‐doped polysilicon films with virtually no change in linewidth from the developed photoresist image. We discuss the influence of the masking profile on the etched film profile and present conditions necessary for controlled film formation.
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Bernacki et al. (1984) studied this question.