ALD of High-κ Dielectrics on Suspended Functionalized SWNTs

Conformal atomic layer deposition (ALD) on as-grown suspended single-walled carbon nanotubes (SWNTs) is not possible due to the inertness of ALD precursor molecules to the SWNT surface. Here, we present a functionalization technique that makes SWNTs reactive with ALD precursors, and deposit high-κ oxides ( Al 2 O 3 and Hf O 2 ) onto the nanotubes to illustrate this method. Reactivity of the precursors with the functionalized nanotubes is due to - N O 2 functional groups attached to the nanotube sidewalls. The effect of the functionalization on the nanotube conductance is shown to be reversible, and doping caused by the deposited oxides is discussed.