Some Properties of Vapor Deposited Ge[sub 3]N[sub 4], Films and the Ge[sub 3]N[sub 4]-Ge Interface

Germanium nitride films were deposited on germanium substrates heated to 400°–600°C by vapor phase reactions of germanium tetrachloride and ammonia. The properties of these films, such as the dissolution rate and the dielectric constant, were determined as a function of deposition temperature. The masking against Sb and As was also investigated. The films exhibited an instability related to trapping at room temperature but Na+ ion migration was not observed under bias‐temperature stress. A hysteresis of the C‐V curves for metal‐nitride‐semiconductor structures was noted. The amount of the hysteresis depended on deposition temperatures; a deposition temperature of 550°C resulted in the smallest hysteresis. By heat‐treatment in , the magnitude of the hysteresis of the samples deposited at low temperature could be diminished while the interface state densities increased.