The authors report the first successful demonstration of self-organised InGaAs quantum wire (QWR) laser diodes (LDs) utilising GaAs multi-atomic steps at 77 K by pulsed current injections. The lasing wavelength of InGaAs QWR-LDs is consistent with the peak position of photoluminescence spectra at 77 K. When a cavity direction is perpendicular to the QWR's array direction, the threshold current density of InGaAs QWR-LDs is smaller than that of quantum well LDs.
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Hara et al. (1998) studied this question.
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