Analysis of Point Defect States in Copper V. Temperature Dependence of the Defect Production by Electron Irradiation

The temperature dependence of the defect production has been investigated by irradiating high purity copper samples with 3 MeV electrons in the temperature range 50 to 207 K. From the initial damage rate the capture radius of the vacancy for migrating interstitials is derived. The observed temperature dependence of the capture radius can be accounted for by a drift diffusion of the interstitials in the elastic strain field of their native vacancy.