We have studied the time response of visible, red photoluminescence in anodically etched p− silicon films. The principal features of our measurements are luminescence with two wavelength components, and a temperature dependent rise time of 24 μs and a decay time of 47 μs at room temperature. Results from our samples show some similarities to characteristics measured in amorphous Si, suggesting that some low-dimensional or disordered Si phase may play a role in the observation of visible light from this new photonic material.
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Pearsall et al. (1992) studied this question.
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