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Time-resolved photoluminescences (PL) of AlxGa1−xAs (0≤x≤0.5) bulk alloys, AlAs/GaAs ordered superlattices, and AlAs/GaAs disordered superlattices are measured at 77 K and compared. The PL lifetimes of the AlAs/GaAs disordered superlattices were always shorter than those of the Al0.5Ga0.5As bulk alloy and the AlAs/GaAs ordered superlattices with indirect band gaps. These shorter PL lifetimes of the disordered superlattices suggest a relaxation of the momentum conservation during radiative recombination by intentional disordering.
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Kasu et al. (1991) studied this question.
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