Time-resolved luminescence experiments have been carried out at low temperatures in hydrogenated amorphous silicon using a pulsed dye laser. The experimental results are discussed on the basis of model calculations which take into account radiative recombination of trapped electron-hole pairs and also nonradiative recombination at dangling bond centres. Fatigue effect in the luminescence has also been investigated by time-resolved measurements.
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Hirabayashi et al. (1981) studied this question.
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