Bias-voltage dependence of tunnel magnetoresistance (TMR) was investigated for epitaxial magnetic tunnel junctions of Fe/MgO/Co2MnSn at various temperatures. The magnetoresistance measurement showed sign change of TMR ratio as a function of bias voltage. Sign change in TMR effect was also observed with changing temperature at a fixed bias voltage around 0 mV. These tunneling behaviors can be explained by a modified Jullière’s model adopting an interaction between tunnel electrons and localized spins of magnetic impurities within the tunnel barrier. The temperature dependent sign change was qualitatively explained by the theoretical calculation.
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Tanaka et al. (2011) studied this question.
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