We report an unconventional oscillatory tunnel magnetoresistance as a function of the applied bias in double barrier magnetic tunnel junctions that were made of two Al₂O₃ barriers sandwiched by three ferromagnetic layers. When the center ferromagnetic layer is aligned antiparallel to the top and bottom magnetic layers, a distinct magnetoresistance oscillation appears with respect to the increase of the bias voltage at 4.2 K and at room temperature. The period of the oscillation is about 1.6 mV.
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Zeng et al. (2005) studied this question.
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