A new profiling technique for shallow damage in semiconductors is described. The technique combines successive anodizations with in situ surface photovoltage measurements. Profiles of recombination centers in Ar+ beam (400–600 eV) milled GaAs were determined. The density of recombination centers near the surface is ≳105 times the bulk value. The density drops to the bulk value within ∼300 Å from the surface.
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Chiang et al. (1984) studied this question.
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