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We demonstrate heteroepitaxial growth of smooth homogeneous Si1−xGex layers on crystalline silicon substrates by means of liquid-phase epitaxy. For a given saturation temperature Tsat, different alloy compositions x can be grown by varying the composition of the solutions. However, smooth epitaxial layers are obtained only up to a critical germanium content xc which increases as Tsat decreases and depends upon the choice of solvent.
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Alonso et al. (1987) studied this question.
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