Answers are grounded in this paper and cite their sources.
We report the growth of GexSi1−x epitaxial layers in situ doped with arsenic by rapid thermal processing chemical vapor deposition at 800 and 900 °C. Films were grown with activated doping levels of up to 2×1019 cm−3 and dopant transition widths (1019–1015 cm−3) of better than 350 Å. Doping was observed to reduce growth rates and significantly improve film quality. Defect densities of the order of 103 cm−2 were achieved with normalized film strains of up to 99%.
No takes yet. Share an insight, caveat, or question.
Jung et al. (1992) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: