Si(100) surfaces were modified by means of enhanced RCA procedure with “ HBF 4 -last” and “HF-last”. Nulling ellipsometric (NE) and secondary ion mass spectrometric (SIMS) measurements revealed that HBF 4 -treated Si surface is more strongly passivated by hydrogen and fluorine than HF-treated one: the oxidation rate of the HBF 4 -treated Si surfaces in air was found to be lower than that of the HF-treate surface. Scanning tunneling microscope (STM) images of HBF 4 -cleaned surface after 18 h storage in air were quite stable during observation, scanning could be easily performed over a wide area on every plot we chose.
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Levenets et al. (1995) studied this question.
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