GaInAs/GaInAsP multi-quantum-well structures emitting at 1.55μm have been realised by gas source molecular beam epitaxy (GSMBE) over a large range of growth temperature. Threshold current densities as low as 0.81 kA/cm2 have been obtained. The first BH lasers fabricated by GSMBE from these heterostructures exhibit low threshold current (18 mA) and linear DC light-current characteristics up to 20 mW.
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Péralès et al. (1989) studied this question.
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