Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness

Gallium nitride based microcavity light emitting diodes less than 400nm thick emitting at a peak wavelength of 455nm have been fabricated. The epitaxial structure was grown by metal organic chemical vapor deposition, and the device was fabricated using a laser lift-off process. Cavity thinning was carried out using inductively coupled plasma etching until a cavity length of roughly 2λ (∼375nm, corresponding to a cavity order of 4 for λ=455nm in GaN) was achieved. Devices are presented that show perfectly detuned angular emission and perfectly resonant emission between the cavity length and emission wavelength.