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III-nitride photonic crystal (PC) ultraviolet (UV) light-emitting diodes (LEDs) were fabricated. Triangular arrays of the PCs with different diameters∕periodicities were patterned using electron-beam lithography and inductively coupled plasma dry etching. The optical power output of LEDs was enhanced by a factor of 2.5 due to PC formation. It was observed that the optical enhancement factor depends strongly on the lattice constant and hole size of the PCs. The achievement of nitride PCs is expected to benefit many applications of III-nitride optoelectronics, particularly for the improvement of extraction efficiency in III-nitride deep-UV emitters (λ<340nm), which are crucial for many important applications, but presently have a very low quantum efficiency.
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Shakya et al. (2004) studied this question.
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